Sindermann, Simon; Wall, Dirk; Roos, K.R.; Horn-von Hoegen, Michael; Meyer zu Heringdorf, Frank:
Anisotropy of Ag Diffusion on Vicinal Si Surfaces
In: e-Journal of Surface Science and Nanotechnology, Band 8 (2010), S. 372 - 376
2010Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » ExperimentalphysikForschungszentren » Center for Nanointegration Duisburg-Essen (CENIDE)
Damit verbunden: 1 Publikation(en)
Titel in Englisch:
Anisotropy of Ag Diffusion on Vicinal Si Surfaces
Autor*in:
Sindermann, SimonUDE
LSF ID
51046
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Wall, DirkUDE
LSF ID
48960
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Roos, K.R.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Meyer zu Heringdorf, FrankUDE
LSF ID
48700
ORCID
0000-0002-5878-2012ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2010
Sprache des Textes:
Englisch

Abstract in Englisch:

Photoemission electron microscopy (PEEM) is used to study Ag surface diffusion on vicinal Si surfaces. The diffusion field is represented by Iso-Coverage Zones around Ag islands during desorption. By analyzing the shape and radius of the Iso-Coverage Zone we can determine diffusion parameters. For anisotropic diffusion the zone has an elliptical shape and the aspect ratio gives a measure for the anisotropy. Using this technique, we study the degree of anisotropy of Ag diffusion on vicinal Si(001) and Si(111). With increasing miscut angles, starting from Si(001) as well as from Si(111), we find a gradually increasing anisotropy, caused by the higher step density. On higher index surfaces, like Si(119), Si(115) and Si(113), we find isotropic diffusion for surfaces with comparable dimer and (double) step structure as on Si(001)-4°, where diffusion is strongly anisotropic.