High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing
Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 minutes duration each with temperatures up to 200 °C causes a relaxation of the Bi films’ lattice parameter towards the Bi bulk value and yields an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%.
Dieser Eintrag ist freigegeben.