Copel, Matthew; Reuter, M.C.; Horn-von Hoegen, Michael; Tromp, R.M.:
Influence of surfactants in Ge and Si epitaxy on Si(001),
In: Physical Review B : Condensed matter and materials physics, Jg. 42 (1990), Heft 18, S. 11682 - 11689
1990Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Influence of surfactants in Ge and Si epitaxy on Si(001),
Autor*in:
Copel, Matthew;Reuter, M.C.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Tromp, R.M.
Erscheinungsjahr:
1990

Abstract:

Epitaxial growth of heterolayers has in the past relied on optimization of growth conditions to overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to either island or interdiffuse, a common strategy is to lower the growth temperature and increase the growth rate to reduce surface mobility. An alternative strategy is to introduce a surface-active species (surfactant) that modifies the growth mode without significant levels of incorporation. This paper discusses the application of As and Sb surfactants to the growth of Ge/Si(001) and Si/GeSi(001). Results from analysis by medium-energy ion scattering, x-ray photoemission, and ultraviolet photoemission are reported. By using a surfactant, island formation is suppressed in the growth of both Ge/Si(001) and Si/Ge/Si(001), resulting in thick, epitaxial films.