Copel, Matthew; Reuter, M.C.; Horn-von Hoegen, Michael; Tromp, R.M.:
Influence of surfactants in Ge and Si epitaxy on Si(001),
1990
In: Physical Review B, Jg. 42 (1990), Heft 18, S. 11682 - 11689
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
Influence of surfactants in Ge and Si epitaxy on Si(001),
Autor(in):
Copel, Matthew; Reuter, M.C.; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tromp, R.M.
Erscheinungsjahr
1990
Erschienen in:
Physical Review B, Jg. 42 (1990), Heft 18, S. 11682 - 11689
ISSN
ISSN
WWW URL

Abstract:

Epitaxial growth of heterolayers has in the past relied on optimization of growth conditions to overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to either island or interdiffuse, a common strategy is to lower the growth temperature and increase the growth rate to reduce surface mobility. An alternative strategy is to introduce a surface-active species (surfactant) that modifies the growth mode without significant levels of incorporation. This paper discusses the application of As and Sb surfactants to the growth of Ge/Si(001) and Si/GeSi(001). Results from analysis by medium-energy ion scattering, x-ray photoemission, and ultraviolet photoemission are reported. By using a surfactant, island formation is suppressed in the growth of both Ge/Si(001) and Si/Ge/Si(001), resulting in thick, epitaxial films.