Horn-von Hoegen, Michael; LeGoues, F.K.; Copel, Matthew; Reuter, M.C.; Tromp, R.M.:
Defect self-annihilation in surfactant-mediated epitaxial growth
In: Physical Review Letters, Jg. 67 (1991), Heft 9, S. 1130
1991Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Defect self-annihilation in surfactant-mediated epitaxial growth
Autor*in:
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
LeGoues, F.K.;Copel, Matthew;Reuter, M.C.;Tromp, R.M.
Erscheinungsjahr:
1991

Abstract:

Islanding and misfit relaxation are obstacles for growth of heteroepitaxial films. Surfactants not only inhibit islanding, but also control defect structure. Growth of Ge on Si(111) was mediated by a monolayer of Sb floating on the surface. Upon exceeding the critical thickness, Shockley partial dislocations initially thread to the surface and then act as nucleation sites for complementary partial dislocations which glide down to the interface, leaving behind a fully relaxed, defect-free, epitaxial Ge film. Thus, the seemingly incompatible goals of strain relief and defect-free growth can be met by a surfactant-modified growth front.