Horn-von Hoegen, Michael; LeGoues, F.K.; Copel, Matthew; Reuter, M.C.; Tromp, R.M.:
Defect self-annihilation in surfactant-mediated epitaxial growth
1991
In: Physical Review Letters, Jg. 67 (1991), Heft 9, S. 1130
Artikel/Aufsatz in Zeitschrift1991Physik
Fakultät für Physik » Experimentalphysik
Titel:
Defect self-annihilation in surfactant-mediated epitaxial growth
Autor(in):
Horn-von Hoegen, MichaelLSF; LeGoues, F.K.; Copel, Matthew; Reuter, M.C.; Tromp, R.M.
Erscheinungsjahr
1991
WWW URL

Abstract:

Islanding and misfit relaxation are obstacles for growth of heteroepitaxial films. Surfactants not only inhibit islanding, but also control defect structure. Growth of Ge on Si(111) was mediated by a monolayer of Sb floating on the surface. Upon exceeding the critical thickness, Shockley partial dislocations initially thread to the surface and then act as nucleation sites for complementary partial dislocations which glide down to the interface, leaving behind a fully relaxed, defect-free, epitaxial Ge film. Thus, the seemingly incompatible goals of strain relief and defect-free growth can be met by a surfactant-modified growth front.