Ag-induced multi-step formation on Si(001)

In: Applied Physics Letters, Jg. 67 (1995) ; Nr. 15, S. 2185-2187
ISSN: 0003-6951, 1077-3118
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Abstract:
The step topography of 4°‐misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low‐energy electron diffraction. The clean Si(001)‐(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag‐induced (3×2) reconstruction