Fölsch, S.; Winau, D.; Meyer, G.; Rieder, K.H.; Horn-von Hoegen, Michael; Schmidt, T.; Henzler, M.:
Ag-induced multi-step formation on Si(001)
1995
In: Applied Physics Letters, Jg. 67 (1995), Heft 15, S. 2185 - 2187
Artikel/Aufsatz in Zeitschrift1995Physik
Fakultät für Physik » Experimentalphysik
Titel:
Ag-induced multi-step formation on Si(001)
Autor(in):
Fölsch, S.; Winau, D.; Meyer, G.; Rieder, K.H.; Horn-von Hoegen, MichaelLSF; Schmidt, T.; Henzler, M.
Erscheinungsjahr
1995
DOI:

Abstract:

The step topography of 4°‐misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low‐energy electron diffraction. The clean Si(001)‐(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag‐induced (3×2) reconstruction