Influence of H on low temperature Si(111) homoepitaxy

In: Surface Science, Jg. 337 (1995) ; 1–2, S. L777–L782
ISSN: 0039-6028
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Molecular beam homoepitaxy on H terminated Si(111)-(1 × 1) surfaces has been studied by high resolution low energy electron diffraction (LEED). Exponentially decaying LEED intensity oscillations reflect the formation of an increasingly rough growth front during Si deposition. For temperatures below 480°C bulk defects are generated which finally lead to non crystalline films. The strong influence of H (even submonolayer coverages) on the growth behaviour is attributed to the high binding energy of 3.1 eV of the HSi bond, which hinders the place exchange process during growth.