Falta, J.; Gog, T.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael:
Interface roughening of Ge delta layers on Si(111)
1995
In: Physical Review B, Jg. 51 (1995), Heft 12, S. 7598
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
Interface roughening of Ge delta layers on Si(111)
Autor(in):
Falta, J.; Gog, T.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
1995
Erschienen in:
Physical Review B, Jg. 51 (1995), Heft 12, S. 7598
ISSN:
ISSN:
Link URL:

Abstract:

Ge δ layers, grown by molecular-beam epitaxy (MBE), surfactant-mediated epitaxy, and solid-phase epitaxy were characterized in situ by high-resolution low-energy electron diffraction and post growth by x-ray standing waves. Initial growth of Ge on Si is found to proceed in a double-bilayer fashion. Subsequent Si deposition leads to a bilayer growth mode. MBE Si deposition is accompanied by Si-Ge site exchanges leading to increased interfacial roughening, which can be partially reduced by solid-phase epitaxy and use of surfactants.