Interface roughening of Ge delta layers on Si(111)
In: Physical Review B, Jg. 51 (1995) ; Nr. 12, S. 7598
ISSN: 1098-0121, 1550-235X
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Ge δ layers, grown by molecular-beam epitaxy (MBE), surfactant-mediated epitaxy, and solid-phase epitaxy were characterized in situ by high-resolution low-energy electron diffraction and post growth by x-ray standing waves. Initial growth of Ge on Si is found to proceed in a double-bilayer fashion. Subsequent Si deposition leads to a bilayer growth mode. MBE Si deposition is accompanied by Si-Ge site exchanges leading to increased interfacial roughening, which can be partially reduced by solid-phase epitaxy and use of surfactants.
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