Horn-von Hoegen, Michael; Falta, J.; Copel, M.; Tromp, R.M.:

Surfactants in Si(111) homoepitaxy

In: Applied Physics Letters, Jg. 66 (1995) ; Nr. 4, S. 487-489
ISSN: 0003-6951, 1077-3118
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Abstract:
Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth

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