Horn-von Hoegen, Michael; Falta, J.; Copel, M.; Tromp, R.M.:
Surfactants in Si(111) homoepitaxy
1995
In: Applied Physics Letters, Jg. 66 (1995), Heft 4, S. 487 - 489
Artikel/Aufsatz in Zeitschrift1995Physik
Fakultät für Physik » Experimentalphysik
Titel:
Surfactants in Si(111) homoepitaxy
Autor(in):
Horn-von Hoegen, MichaelLSF; Falta, J.; Copel, M.; Tromp, R.M.
Erscheinungsjahr
1995
WWW URL
Erschienen in:
Titel:
Applied Physics Letters
in:
Jg. 66 (1995), Heft 4, S. 487 - 489
ISSN:
ISSN:

Abstract:

Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth