Epitaxial layer growth of Ag(111)-films on Si(100)
Deposition of Ag at 130 K results in epitaxial layer growth of a continuous Ag(1 1 1)-film on Si(100). The azimuthal orientation of the Ag(1 1 1)-crystallites is determined by the dimer rows of the Si(100) terraces and alternates by 90° from step to step of the Si substrate. In one direction the highly mismatched (100)- and (1 1 1)-lattices fit nearly exactly with a ratio of 4 Ag atoms to 3 Si atoms. In the other direction the remaining lattice mismatch of 2.2% is adjusted by a parallel array of interfacial dislocations which are observed with LEED (via spot splitting) and STM.
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