Stress reduction and interface quality of buried Sb delta-layers on Si(001)
We have investigated the width dependence of Sb delta (δ) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition. Depending on the Sb adsorption conditions a 2×1 and a 2×n surface reconstruction is observed. Measurements of crystal truncation rods and x‐ray standing waves show a drastically reduced interface roughness and a better crystal quality for δ layers grown on Sb:Si(001)−2×n substrates in comparison to Sb:Si(001)‐2×1, which we attribute to reduced surface stress of the Sb:Si(001)‐2×n reconstruction. © 1996 American Institute of Physics.
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