Falta, J.; Bahr, D.; Hille, A.; Materlik, G.; Kammler, Martin; Horn-von Hoegen, Michael:
Stress reduction and interface quality of buried Sb delta-layers on Si(001)
In: Applied Physics Letters, Jg. 69 (1996), Heft 19, S. 2906 - 2908
1996Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Stress reduction and interface quality of buried Sb delta-layers on Si(001)
Autor*in:
Falta, J.;Bahr, D.;Hille, A.;Materlik, G.;Kammler, MartinUDE
LSF ID
50189
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1996

Abstract:

We have investigated the width dependence of Sb delta (δ) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition. Depending on the Sb adsorption conditions a 2×1 and a 2×n surface reconstruction is observed. Measurements of crystal truncation rods and x‐ray standing waves show a drastically reduced interface roughness and a better crystal quality for δ layers grown on Sb:Si(001)−2×n substrates in comparison to Sb:Si(001)‐2×1, which we attribute to reduced surface stress of the Sb:Si(001)‐2×n reconstruction. © 1996 American Institute of Physics.