Falta, J.; Bahr, D.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael:
Towards perfect Ge delta layers on Si(001)
1996
In: Applied Physics Letters, Jg. 68 (1996), Heft 10, S. 1394 - 1396
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
Towards perfect Ge delta layers on Si(001)
Autor(in):
Falta, J.; Bahr, D.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
1996
Erschienen in:
Applied Physics Letters, Jg. 68 (1996), Heft 10, S. 1394 - 1396
ISSN:
ISSN:
Link URL:

Abstract:

The effect of different methods of growth on the interface quality of extremely thin buried GexSi1−x films (δ layers) was studied by means of in situ spot profile analysis low‐energy electron diffraction and extensive postgrowth x‐ray characterization by measurements of crystal truncation rods and x‐ray standing waves. In comparison to molecular beam epitaxy, solid phase epitaxy and surfactant mediated growth result in a significant reduction of Ge–Si intermixing and interface roughness. © 1996 American Institute of Physics.