Falta, J.; Bahr, D.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael:
Towards perfect Ge delta layers on Si(001)
1996
In: Applied Physics Letters, Jg. 68 (1996), Heft 10, S. 1394 - 1396
Artikel/Aufsatz in Zeitschrift1996Physik
Fakultät für Physik » Experimentalphysik
Titel:
Towards perfect Ge delta layers on Si(001)
Autor(in):
Falta, J.; Bahr, D.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, MichaelLSF
Erscheinungsjahr
1996
WWW URL
Erschienen in:
Titel:
Applied Physics Letters
in:
Jg. 68 (1996), Heft 10, S. 1394 - 1396
ISSN:
ISSN:

Abstract:

The effect of different methods of growth on the interface quality of extremely thin buried GexSi1−x films (δ layers) was studied by means of in situ spot profile analysis low‐energy electron diffraction and extensive postgrowth x‐ray characterization by measurements of crystal truncation rods and x‐ray standing waves. In comparison to molecular beam epitaxy, solid phase epitaxy and surfactant mediated growth result in a significant reduction of Ge–Si intermixing and interface roughness. © 1996 American Institute of Physics.