Bahr, D.; Falta, J.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael:

X-ray interface characterization of Ge delta layers on Si(001)

In: Physica B: Condensed Matter, Jg. 221 (1996) ; Nr. 1-4, S. 96–100
ISSN: 0921-4526
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Detailed characterization of extremely thin buried Ge films of monolayer thickness (δ layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the average layer thicknesses and interface roughnesses as well as the stoichiometry of the layers. X-ray standing wave measurements give an independent measure of the epitaxial quality of the Ge film. Ge δ layers on Si(001) were grown by molecular beam epitaxy (MBE) at 350°C with coverage ranging from 1 to 6 ML. We find strong segregation of the first deposited Ge monolayer with subsequent Si deposition. Upon deposition of more Ge, additional Ge forms a Ge film at the Si/Ge interface. The thickness of this film is limited by Ge island formation for Ge coverage exceeding 3–4 ML.

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