Reinking, Dirk; Kammler, Martin; Horn-von Hoegen, Michael; Hofmann, Karl R.:
High electron mobilities in surfactant-grown Germanium on Silicon substrates
1997
In: Japanese Journal of Applied Physics, Band 36 (1997), S. 1082 - 1085
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
High electron mobilities in surfactant-grown Germanium on Silicon substrates
Autor(in):
Reinking, Dirk; Kammler, Martin im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Hofmann, Karl R.
Erscheinungsjahr:
1997
Erschienen in:
Japanese Journal of Applied Physics, Band 36 (1997), S. 1082 - 1085
ISSN:
Link URL:

Abstract:

We present the first investigation of the electrical properties of relaxed Ge layers grown on Si(111) substrates by surfactant-mediated epitaxy with Sb. Electron Hall mobilities and carrier concentrations of 1 µ m thick epitaxial Ge layers grown on p-type Si-substrates at temperatures between 640° C and 720° C were determined at 300 K and 77 K. The highest electron mobilities, 3100 cm2/Vs and 12300 cm2/Vs, at 300 K and 77 K, were observed in the 720° C sample. At 300 K an electron concentration of only 1.1×1016 cm-3 was measured suggesting a substantially lower incorporation of the surfactant Sb compared to earlier publications. The low Sb doping was independently supported by secondary ion mass spectroscopy (SIMS).