Reinking, Dirk; Kammler, Martin; Horn-von Hoegen, Michael; Hofmann, Karl R.:
Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si
In: Applied Physics Letters, Jg. 71 (1997), Heft 7, S. 924 - 926
1997Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si
Autor*in:
Reinking, Dirk;Kammler, MartinUDE
LSF ID
50189
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Hofmann, Karl R.
Erscheinungsjahr:
1997

Abstract:

Surfactant-mediated epitaxy (SME) allows the growth of smooth, continuous, relaxed, and principally defect free Ge films directly on Si(111); however, the very high surfactant doping level in the range of the solid solubility limit made them unacceptable for most device applications. By using high temperature SME we have reduced the Sb surfactant background doping level by more than three orders of magnitude. This is attributed to an enhanced surfactant segregation without kinetic limitations. The low Sb incorporation has been determined by an electrical characterization: An electron concentration of 1.1×1016 cm−3 and a very high electron Hall mobility of 3100 cm2/V s at 300 K (12 300 cm2/V s at 77 K) suggest an interesting potential of SME grown Ge films for future device applications.