Falta, J.; Mielmann, O.; Schmidt, T.; Hille, A.; Sanchez-Hanke, C.; Sonntag, P.; Materlik, G.; Meyer zu Heringdorf, Frank; Kammler, Martin; Horn-von Hoegen, Michael; Copel, M.:
High concentration Bi delta-doping layers on Si(001)
1998
In: Applied Surface Science, Band 123/124 (1998), S. 538 - 541
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
High concentration Bi delta-doping layers on Si(001)
Autor(in):
Falta, J.; Mielmann, O.; Schmidt, T.; Hille, A.; Sanchez-Hanke, C.; Sonntag, P.; Materlik, G.; Meyer zu Heringdorf, Frank im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Kammler, Martin im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Copel, M.
Erscheinungsjahr:
1998
Erschienen in:
Applied Surface Science, Band 123/124 (1998), S. 538 - 541
ISSN:
DOI:

Abstract:

Medium energy ion scattering, X-ray standing waves and measurements of crystal truncation rods were used to show that it is possible to prepare spatially well confined Bi doping layers (δ-doping layers) on Si(001) with a Bi doping level of 3 × 1021 cm−3 by a combination of Bi molecular beam epitaxy and low temperature deposition of a Si top layer with subsequent annealing (solid phase epitaxy). The Bi concentration exceeds the equilibrium Bi solubility by more than three orders of magnitude. The Bi atoms are incorporated into the Si host lattice on substitutional sites. The Bi doping profile exponentially decays into the top Si layer with an attenuation length ranging from 40 to 6 Å and a fraction of Bi atoms in substitutional lattice sites of up to 96%, depending on the annealing conditions.