Abstract:

A combination of measurements of crystal truncation roda and X-ray standing waves has been used for a detailed characterization of buried Ge δ layers on Si(001). Measurements of crystal truncation rods reveal the interface roughness, the δ layer lattice constant and the δ layer concentration. From measurements with X-ray standing waves the dopant lattice position and crystallinity of the δ layer are determined. We find a linear dependence of the local tetragonal distortion of the Ge bonding in the δ layer on the Ge concentration in the layer.