Reinking, Dirk; Kammler, Martin; Hoffmann, N.; Horn-von Hoegen, Michael; Hofmann, Karl R.:

Ge p-MOSFETs Compatible with Si CMOS-Technology

In: ESSDERC'99 : Proceedings of the 29th European solid-state device research conference / Maes,, H.E.; Mertens, R.P.; Declerk, G. (Hrsg.)
Leuven, Belgium,13-15 september: Neuilly (1999), S. 300-303
ISBN: 2863322451, 9782863322451
Buchaufsatz / Kapitel / Fach: Physik
Fakultät für Physik » Experimentalphysik
High-mobility Ge p-MOSFETs with relaxed
high-quality Ge channel layers directly
grown on silicon substrates by surfactant-
mediated epitaxy (SME) have been
realised. The devices with 30 nm thick
LPCVD gate oxides were fabricated with a
low-temperature self-aligned W-gate
process which is compatible with
conventional Si CMOS technology. The
influence of a Si cap layer with 0 to 10 11m
thickness on top of the Ge channel layer
under the gate oxide was investigated
yielding a strong increase of saturation
transconductance and effective p-channel
mobility with decreasing cap layer thickness.
For 2 nm Si cap layer devices the
intrinsic saturation transconductance
reached a maximum of 46 mSlmm (at LG =
1 J.Il1'l) and an effective p-channel mobility
value of 31 0 cm21Vs at large gate voltages,
which exceeds the mobilities of any pMOSFET
fabricated on a silicon substrate