Reinking, Dirk; Kammler, Martin; Hoffmann, N.; Horn-von Hoegen, Michael; Hofmann, Karl R.:
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
1999
In: Electronic Letters, Band 35 (1999), S. 503 - 504
Artikel/Aufsatz in Zeitschrift1999Physik
Fakultät für Physik » Experimentalphysik
Titel:
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
Autor(in):
Reinking, Dirk; Kammler, MartinLSF; Hoffmann, N.; Horn-von Hoegen, MichaelLSF; Hofmann, Karl R.
Erscheinungsjahr
1999
WWW URL

Abstract:

The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs