Reinking, Dirk; Kammler, Martin; Hoffmann, N.; Horn-von Hoegen, Michael; Hofmann, Karl R.:

Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

In: Electronic Letters, Jg. 35 (1999), S. 503-504
ISSN: 0013-5194
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=756421&tag=1
Abstract:

The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs

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