Cavalleri, Andrea; Siders, Craig W.; Rose-Petruck, Christoph G.; Jimenez, Ralph; Tóth, Csaba; Squier, J.A.; Barty, Christopher P.P.; Wilson, Kent R.; Sokolowski-Tinten, Klaus; Horn-von Hoegen, Michael; von der Linde, Dietrich:

Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold"

In: Physical Review B, Jg. 63 (2001) ; Nr. 19, S. 193306 (4p)
ISSN: 1098-0121, 0163-1829, 0556-2805
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.