Si(001)step dynamics: a temporal low-energy electron diffraction study
We present equilibrium measurements of the dynamics of steps on Si(001) using temporal electron-diffraction spectroscopy. Activation energies and the rate limiting kinetics are identified for 950K<~T<~1130K. Unlike previous studies at higher temperatures, we can exclude evaporation and condensation of atoms or dimers from the step edges as the rate limiting process in this temperature regime. The possible reason for this difference is discussed in terms of a crossover from different rate-limiting kinetics.
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