Kammler, Martin; Horn-von Hoegen, Michael:
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
2004
In: Applied Physics Letters, Jg. 85 (2004), Heft 15, 3056 (3p)
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
Autor(in):
Kammler, Martin im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2004
Erschienen in:
Applied Physics Letters, Jg. 85 (2004), Heft 15, 3056 (3p)
ISSN:
ISSN:
Link URL:

Abstract:

Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.