Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2×1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400–500 °C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.
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