Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,

In: Analytical and Bioanalytical Chemistry, Jg. 379 (2004) ; Nr. 4, S. 588-593
ISSN: 1618-2650, 1618-2642
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2×1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400–500 °C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.