AlFalou, A.A.; Kammler, Martin; Horn-von Hoegen, Michael:
Strain state analysis of hetero-epitaxial systems
In: EPL (Europhysics Letters), Jg. 69 (2005), Heft 4, S. 570
2005Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Strain state analysis of hetero-epitaxial systems
Autor*in:
AlFalou, A.A.;Kammler, MartinUDE
LSF ID
50189
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2005

Abstract:

We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.