Strain state analysis of hetero-epitaxial systems
In: EPL : Europhysics Letters, Jg. 69 (2005) ; Nr. 4, S. 570
ISSN: 1286-4854, 0295-5075
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.