AlFalou, A.A.; Kammler, Martin; Horn-von Hoegen, Michael:
Strain state analysis of hetero-epitaxial systems
2005
In: EPL : Europhysics Letters, Jg. 69 (2005), Heft 4, S. 570
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Titel:
Strain state analysis of hetero-epitaxial systems
Autor(in):
AlFalou, A.A.; Kammler, Martin im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr
2005
Erschienen in:
EPL : Europhysics Letters, Jg. 69 (2005), Heft 4, S. 570
ISSN
ISSN
WWW URL

Abstract:

We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.