Dynamics of an Ising chain under local excitation: An STM study of Si(100) dimer rows at T = 5K
In: Physical Review Letters, Jg. 96 (2006) ; Nr. 2, S. 26102 (4p)
ISSN: 1079-7114, 0031-9007
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
An extension of the classical Ising model to a situation including a source of spin-flip excitations localized on the scale of individual spins is considered. The scenario is realized by scanning tunneling microscopy of the Si(100) surface at low temperatures. Remarkable details, corresponding to the passage of phasons through the tunnel junction, are detected by the STM within the short span between two atoms comprising an individual Si dimer.