Krenzer, B.; Janzen, A.; Zhou, Ping; von der Linde, Dietrich; Horn-von Hoegen, Michael:
Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,
In: New Journal of Physics (NJP), Band 8 (2006), S. 190
2006Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,
Autor*in:
Krenzer, B.;Janzen, A.;Zhou, PingUDE
LSF ID
10448
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
von der Linde, DietrichUDE
GND
121993092X
LSF ID
10402
ORCID
0000-0001-5618-3879ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2006

Abstract:

Ultrafast electron diffraction (UED) at surfaces is used to study the energy dissipation in ultrathin epitaxial Bi-films on Si(001) subsequent to fs laser pulse excitation. The temperature of the Bi-film is determined from the drop in diffraction intensity due to the Debye–Waller effect. A temperature rise from 80 to 200 K is followed by an exponential cooling with a time constant of 640 ps. The cooling rate of the Bi-film is determined by the reflection of phonons at the Bi/Si interface and is slower than expected from the acoustic and diffusive mismatch model.