Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,

In: Physical Review B, Jg. 74 (2006) ; Nr. 19, S. 195340 (5p)
ISSN: 1095-3795, 1550-235X, 1098-0121
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
The growth of Bi on a Si(001) surface is studied in situ by spot profile analyzing low-energy electron diffraction and ex situ by atomic force microscopy. A continuous epitaxial Bi(111) film with a thickness of 6 nm is grown at 150 K in a bilayer growth mode. During annealing to 450 K the lattice mismatch between Si(001) and Bi(111) is accommodated by a periodic interfacial misfit dislocation array. On this relaxed template, Bi(111) films can be grown to any desired thickness. Such films are composed of twinned and 90° rotated micrometer sized Bi(111) crystallites with a roughness of less than 0.6 nm for a 30 nm thick film.

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