Kury, Peter; Roos, Kelly R.; Horn-von Hoegen, Michael; Meyer zu Heringdorf, Frank:
Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface : a buried reconstruction interface
In: New Journal of Physics (NJP), Band 10 (2008), S. 23037
2008Artikel/Aufsatz in ZeitschriftOA Gold
Physik (inkl. Astronomie)Fakultät für Physik » ExperimentalphysikForschungszentren » Center for Nanointegration Duisburg-Essen (CENIDE)
Damit verbunden: 1 Publikation(en)
Titel in Englisch:
Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface : a buried reconstruction interface
Autor*in:
Kury, Peter;Roos, Kelly R.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Meyer zu Heringdorf, FrankUDE
LSF ID
48700
ORCID
0000-0002-5878-2012ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2008
Open Access?:
OA Gold
Sprache des Textes:
Englisch

Abstract in Englisch:

We use high-resolution surface stress measurements to monitor the surface stress during the growth of pentacene (C22H14) on the (7×7) reconstructed silicon (111) surface. No significant change in the surface stress is observed during the pentacene growth. Compared to the changes in the surface stress observed for Si and Ge deposition on the Si(111)-(7×7) surface, the insignificant change in the surface stress observed for the pentacene growth suggests that the pentacene molecules of the first adsorbate layer, although forming strong covalent bonds with the Si adatoms, do not alter the structure of the (7×7) reconstruction. The (7×7) reconstruction remains intact and, with subsequent deposition of pentacene, eventually becomes buried under the growing film. This failure of the pentacene to affect the structure of the reconstruction may represent a fundamental difference between the growth of organic thin films and that of inorganic thin films on semiconductor surfaces