Jnawali, Giriraj; Meyer zu Heringdorf, Frank; Wall, Dirk; Sindermann, Simon; Horn-von Hoegen, Michael:
Stable tungsten disilicide contacts for surface and thin film resistivity measurements
2009
In: Journal of Vacuum Science & Technology B, Jg. 27 (2009), Heft 1, S. 180
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Zentrale wissenschaftliche Einrichtungen » Center for Nanointegration Duisburg-Essen (CENIDE)
Titel:
Stable tungsten disilicide contacts for surface and thin film resistivity measurements
Autor(in):
Jnawali, Giriraj im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Meyer zu Heringdorf, Frank im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Wall, Dirk im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Sindermann, Simon im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr
2009
Erschienen in:
Journal of Vacuum Science & Technology B, Jg. 27 (2009), Heft 1, S. 180
ISSN
ISSN
DOI

Abstract:

High-temperature stable electric contacts of tungsten disilicide (WSi2) on Si(001) are fabricated by a simple two-step process: vacuum deposition of W on the native Si dioxide and subsequent annealing under ultrahigh-vacuum conditions. Silicidation starts at 1000 K, as, it is believed to occur, the Si diffuses to the surface through the defects in the oxide. Flash annealing to 1500 K removes the oxide, resulting in stable WSi2 contacts on the surface. Contamination due to migrating W is confined to within a micrometer of the edge of the WSi2 contacts. Beyond this micrometer-sized zone, the surface is free of contamination as confirmed by low-energy electron microscopy and high-resolution low-energy electron diffraction. Reproducible resistance curves during annealing and cooling of the Si(001) sample confirm the reliability of the contacts, which can withstand many flash-annealing cycles without degradation.