Stable tungsten disilicide contacts for surface and thin film resistivity measurements
In: Journal of Vacuum Science & Technology B, Jg. 27 (2009) ; Nr. 1, S. 180
ISSN: 0734-211X, 1071-1023
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Experimentalphysik
Zentrale wissenschaftliche Einrichtungen » Center for Nanointegration Duisburg-Essen (CeNIDE)
High-temperature stable electric contacts of tungsten disilicide (WSi2) on Si(001) are fabricated by a simple two-step process: vacuum deposition of W on the native Si dioxide and subsequent annealing under ultrahigh-vacuum conditions. Silicidation starts at 1000 K, as, it is believed to occur, the Si diffuses to the surface through the defects in the oxide. Flash annealing to 1500 K removes the oxide, resulting in stable WSi2 contacts on the surface. Contamination due to migrating W is confined to within a micrometer of the edge of the WSi2 contacts. Beyond this micrometer-sized zone, the surface is free of contamination as confirmed by low-energy electron microscopy and high-resolution low-energy electron diffraction. Reproducible resistance curves during annealing and cooling of the Si(001) sample confirm the reliability of the contacts, which can withstand many flash-annealing cycles without degradation.