van Gastel, Raoul; N'Diaye, Alpha T.; Wall, Dirk; Coraux, Johann; Busse, Carsten; Mohamadie Buckanie, Niemma; Meyer zu Heringdorf, Frank; Horn-von Hoegen, Michael; Michely, Thomas; Poelsema, Bene:
Selecting a single orientation for millimeter sized graphene sheets
2009
In: Applied Physics Letters, Jg. 95 (2009), Heft 12, 121901 (3p)
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Fakultät für Physik » Experimentalphysik
Zentrale wissenschaftliche Einrichtungen » Center for Nanointegration Duisburg-Essen (CENIDE)
Titel:
Selecting a single orientation for millimeter sized graphene sheets
Autor(in):
van Gastel, Raoul; N'Diaye, Alpha T.; Wall, Dirk im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Coraux, Johann; Busse, Carsten; Mohamadie Buckanie, Niemma im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Meyer zu Heringdorf, Frank im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Horn-von Hoegen, Michael im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Michely, Thomas; Poelsema, Bene
Erscheinungsjahr
2009
Erschienen in:
Applied Physics Letters, Jg. 95 (2009), Heft 12, 121901 (3p)
ISSN
ISSN
DOI

Abstract:

We have used low energy electron microscopy and photo emission electron microscopy to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants grow. Cyclic growth exploiting the faster growth and etch rates of the rotational variants, yields films that are 99% composed of aligned domains. Precovering the substrate with a high density of graphene nuclei prior to CVD yields pure films of aligned domains extending over millimeters. Such films can be used to prepare cluster-graphene hybrid materials for catalysis or nanomagnetism and can potentially be combined with lift-off techniques to yield high-quality, graphene based, electronic devices.