Metois, Jean Jacques; Wolf, Dietrich:
Kinetic surface roughening of Si(001) during sublimation
1993
In: Surface Science, Jg. 298 (1993), Heft 1, S. 71 - 78
Artikel/Aufsatz in Zeitschrift1993Physik
Titel:
Kinetic surface roughening of Si(001) during sublimation
Autor(in):
Metois, Jean Jacques; Wolf, DietrichLSF
Erscheinungsjahr
1993
WWW URL
Erschienen in:
Titel:
Surface Science
in:
Jg. 298 (1993), Heft 1, S. 71 - 78
ISSN:
Signatur der UB

Abstract:

Experimental evidence is given that the sublimation rate of vicinal silicon (001) surfaces depends on the misorientation. Three regimes are studied: step flow without and with Lochkeim-formation on the terraces, as well as the high temperature regime, where the surface becomes atomically rough. Qualitatively these observations are in agreement with theoretical predictions of the anisotropic KPZ-theory.