Kinetic surface roughening of Si(001) during sublimation
In: Surface Science, Jg. 298 (1993) ; Nr. 1, S. 71-78
Zeitschriftenaufsatz / Fach: Physik
Experimental evidence is given that the sublimation rate of vicinal silicon (001) surfaces depends on the misorientation. Three regimes are studied: step flow without and with Lochkeim-formation on the terraces, as well as the high temperature regime, where the surface becomes atomically rough. Qualitatively these observations are in agreement with theoretical predictions of the anisotropic KPZ-theory.
Dieser Eintrag ist freigegeben.