Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si
In: Journal of vacuum science and technology : B : Nanotechnology and microelectronis, Jg. 21 (2003) ; Nr. 6, S. 2388-2392
ISSN: 0734-211X, 1071-1023
Zeitschriftenaufsatz / Fach: Physik
The growth temperature dependence of Si adatom diffusion on Si (100) surface was systematically investigated in a cold wall ultrahigh vacuum chemical vapor deposition system. Si epitaxial layers were selectively grown on local oxidation of silicon patterned Si substrates. By cross-sectional transmission electron microscopy analysis, the increase in Si growth rate on the Si (100) surface near the edge of (311) facet was observed at various growth temperatures. This can be understood as a consequence of the mass transport from the sidewall (311) facet to the top (100) surface. Based on a simple diffusion model, the surface diffusion lengths of Si adatoms along the  direction were estimated to be about 70, 140, and 200 nm at 550, 600, and 650 °C, respectively. The calculated activation energy of 1.4 eV for diffusion of Si adatoms from the temperature dependence of the diffusion length was relatively higher than those in previous reports obtained under ultrahigh vacuum environment. This difference was discussed in terms of the discrepancy in the surface states by hydrogen adsorption on the Si surface.
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