Structural and electrical properties of RuO2 thin films prepared by rf-magnetron sputtering and annealing at different temperatures

In: Journal of Materials Science: Materials in Electronics, Jg. 17 (2006) ; Nr. 12, S. 1029-1034
ISSN: 1573-482X, 0957-4522
Zeitschriftenaufsatz / Fach: Physik
Fakultät für Physik » Technische Physik
Abstract:
Conductive ruthenium oxide (RuO2) thin films have been deposited at different substrate temperatures on various substrates by radio-frequency (rf) magnetron sputtering and were later annealed at different temperatures. The thickness of the films ranges from 50 to 700 nm. Films deposited at higher temperatures show larger grain size (about 140 nm) with (200) preferred orientation. Films deposited at lower substrate temperature have smaller grains (about 55 nm) with (110) preferred orientation. The electrical resistivity decreases slightly with increasing film thickness but is more influenced by the deposition and annealing temperature. Maximum resistivity is 861 μΩ cm, observed for films deposited at room temperature on glass substrates. Minimum resistivity is 40 μΩ cm observed for a thin film (50 nm) deposited at 540°C on a quartz substrate. Micro-Raman investigations indicate that strain-free well-crystallized thin films are deposited on oxidized Si substrates.

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