Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
In: Physical Review B : Condensed matter and materials physics, Jg. 80 (2009), Heft 16, 165326 (10pp)
Titel:
Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
Autor*in:
Stegner, Andre R.;Pereira, Rui N.;Lechner, Robert;Klein, Konrad;Wiggers, HartmutUDE
- GND
- 172637171
- LSF ID
- 1643
- ORCID
- 0000-0001-8487-9937
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2009