Self-catalyzed growth of GaSb nanowires at low reaction temperatures
Thermal decomposition of Lewis acid–base adducts [t-Bu3Ga-Sbi-Pr3] (1) and [t-Bu3Ga]2[Sb2Et4] (2) in closed glass ampoules at temperatures between 250 and 350 °C yielded crystalline GaSb nanowires. Isolated GaSb nanowires were formed preferably at low decomposition temperatures, whereas dendritic-like growth was observed at higher decomposition temperatures. In addition, self-catalyzed growth of GaSb nanowires using 90 nm-sized Ga droplets, which were pre-deposited on Si(1 0 0) substrates, was achieved with the distibine Sb2Et4 at 250 °C.
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