The technology of quantum tunnelling devices, namely III/V double barrier Resonant Tunnelling Diodes (RTD) and Si/SiGe Interband Tunnelling Diodes (ITD), is studied for logic circuit applications. The homogeneity and reproducibility of MBE grown InP-based RTD devices with mesa technology is presented. Si/SiGe ITD have been grown by MBE on high resistivity (n-) Silicon substrates. A novel self-aligned diode is processed using optical lithography and dopant-selective wet chemical etching. Comparing RTD and ITD data the differences are due to the vertical spacing of the doped layers within the device. A nanoelectronic circuit architecture based on an improved MOBILE threshold logic gate is used. SPICE simulations are carried-out in order to evaluate tolerable clock and supply voltage fluctuations in comparison to device fluctuations.