InP-based monolithically integrated RTD/HBT Mobile for logic circuits
In: IEEE International Conference on Indium Phosphide and Related Materials. 13th IPRM Proceedings, (2001), S. 232 - 235
Zeitschriftenaufsatz / Fach: Elektrotechnik
A pseudo dynamic logic family is developed on InP-substrate based on the MOBILE concept. The conventional HFET as input terminal is replaced by a monolithically integrated series combination of a HBT and a RTD forming a RTBT. This combination enables a logic function defined by the RTD area, only. The HBT provides a robust enhancement type operation though for full level compatibility a buffer inverter is still necessary. A novel distributed clocking scheme is developed. The feasibility of this logic concept is experimentally verified and a OR gate will be discussed in detail.