Spieler, J.; Kippenbreg, T.; Krauß, J.; Kiesel, P.; Döhler, G. H.; Prost, Werner; Velling, P.; Tegude, Franz-Josef:
Electro-optical examination of the band structure of ordered InGaAs
2000
In: Applied physics letters, Jg. Vol. 76 (2000), Heft Heft 1, S. 88 - 90
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Electro-optical examination of the band structure of ordered InGaAs
Autor(in):
Spieler, J.; Kippenbreg, T.; Krauß, J.; Kiesel, P.; Döhler, G. H.; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Velling, P.; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2000
Erschienen in:
Applied physics letters, Jg. Vol. 76 (2000), Heft Heft 1, S. 88 - 90
ISSN:
Signatur der UB:
Link URL:

Abstract:

Using electroabsorption measurements, we have studied the effects of atomic superlattice ordering on the electronic band structure of InGaAs for different growth parameters. We have observed ordering-induced polarization anisotropy, valence-band splitting and band gap reduction strongest for 550 degrees C growth and 2 degrees[111](B) tilted substrates. Back-folded conduction-band states show an ordering dependent energy shift. The position of the split-off valence-band, however, is almost unaffected. An extension to extremely low growth temperatures exhibits ordering also for 450 degrees C growth. Atomic force microscopy measurements reveal a temperature-dependent change of InGaAs surface from step-like to island formation.