Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration Of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no: degradation during subsequent growth. Increasing the growth temperature after the base from 500 degreesC to 680 degreesC within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the de gain and the turn-on voltage.
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