Keiper, D.; Velling, P.; Prost, Werner; Agethen, M.; Tegude, Franz-Josef; Landgren, G.:
Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
2000
In: Japanese journal of applied physics : JJAP, Part 1, Regular papers, brief communications & review papers, Jg. Vol. 39 (2000), Heft Heft 11, S. 6162 - 6165
Artikel/Aufsatz in Zeitschrift2000Elektrotechnik
Titel:
Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
Autor(in):
Keiper, D.; Velling, P.; Prost, WernerLSF; Agethen, M.; Tegude, Franz-JosefLSF; Landgren, G.
Erscheinungsjahr
2000
WWW URL

Abstract:

A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration Of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no: degradation during subsequent growth. Increasing the growth temperature after the base from 500 degreesC to 680 degreesC within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the de gain and the turn-on voltage.