Auer, U.; Prost, Werner; Tegude, Franz-Josef; Duschl, R.; Eberl, K.; Agethen, F.J.:
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
2001
In: IEEE ELECTRON DEVICE LETTERS, Jg. Vol. 22 (2001), Heft Heft 5, S. 215 - 217
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
Autor(in):
Auer, U.; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Duschl, R.; Eberl, K.; Agethen, F.J.
Erscheinungsjahr
2001
Erschienen in:
IEEE ELECTRON DEVICE LETTERS, Jg. Vol. 22 (2001), Heft Heft 5, S. 215 - 217
ISSN
ISSN
Signatur der UB
WWW URL

Abstract:

Si/SiGe interband tunnelling diodes have been grown by MBE an high resistivity (n(-)) silicon substrates. The device enables a very low voltage, high-speed logic on silicon substrate. A novel self-aligned diode is processed using optical lithography and dopant-selective wet chemical etching. A maximum speed index for a 60 mum(2) anode area device is evaluated to 2.2 ns/V resulting in a switching speed of 0.5 ns. A logic latch built of two series connected diodes (MOBILE principle) is demonstrated,showing very robust logic operation at a supply voltage as low as 0.3 V. The used technology may be used for a co-integration with both SiGe heterostructure bipolar- and field effect transistor technology and may contribute to future low-voltage high speed logic on Si-substrates.