Circuit and application aspects of tunnelling devices in a MOBILE configuration
In this paper, circuit and application aspects of different monostable-bistable transition logic elements (MOBILEs) are analysed. By taking advantage of the multi-state behaviour of resonant tunnelling devices (RTD) the logic depth and the circuit complexity per logic function is reduced at the gate level. Both, simulation and measurement results prove correct circuit operation in the gigahertz regime and I-O compatibiliy of the logic voltage levels. The scaling laws of the different MOBILEs are compared to each other in terms of speed and power dissipation. Detailed SPICE simulations based on experimental data precisely analyse the impact of fluctuations on the circuit functionality and performance. This study demonstrates that RTD-based MOBILEs are ready for use in digital circuitry such as linear threshold gates which offer a highly reduced circuit complexity.
Dieser Eintrag ist freigegeben.