Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
We systematically investigated the DC-characteristics of Si/SiGe interband tunneling diodes as a function of layer structure and device geometry. The Si spacer thicknesses X-P and X-N between the intrinsic SiGe layer and the p- and n-delta-doped layers were varied. We obtained a peak current density of 16 kA/cm(2) and a peak-to-valley current ratio of 2.7 (with a device area of 45 mum(2)) for a structure with X-P=0 nm and X-N=1 nm. A good homogeneity of all measured diode parameters was achieved over the wafer area.
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