Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef:
Surface recombination mechanism in graded-base InGaAs-InP HBTs
2004
In: IEEE transactions on electron devices, Jg. 51 (2004), Heft 6, S. 1044 - 1045
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Surface recombination mechanism in graded-base InGaAs-InP HBTs
Autor(in):
Jin, Zhi; Neumann, Stefan; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2004
Erschienen in:
IEEE transactions on electron devices, Jg. 51 (2004), Heft 6, S. 1044 - 1045
ISSN:
Signatur der UB:

Abstract:

The surface recombination at extrinsic base region in graded-base InGaAs-InP heterostructure bipolar transistors (HBTs) is studied. The (NH4)(2)S treatment eliminates the surface recombination, seen from the size-independent current gain. The surface recombination currents of the self- and nonself-aligned HBTs have different behavior. The mechanism of it is discussed.