Surface recombination mechanism in graded-base InGaAs-InP HBTs
In: IEEE transactions on electron devices, Jg. 51 (2004) ; Nr. 6, S. 1044 - 1045
Zeitschriftenaufsatz / Fach: Elektrotechnik
The surface recombination at extrinsic base region in graded-base InGaAs-InP heterostructure bipolar transistors (HBTs) is studied. The (NH4)(2)S treatment eliminates the surface recombination, seen from the size-independent current gain. The surface recombination currents of the self- and nonself-aligned HBTs have different behavior. The mechanism of it is discussed.