Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef:
Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
2004
In: Physica status solidi A - Applied research, Jg. 201 (2004), Heft 5, S. 1017 - 1021
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
Autor(in):
Jin, Zhi; Neumann, Stefan; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr
2004
Erschienen in:
Physica status solidi A - Applied research, Jg. 201 (2004), Heft 5, S. 1017 - 1021
ISSN
Signatur der UB

Abstract:

Graded-base InGaAs/lnP HBTs were passivated by (NH4)(2)S solution. The current gain increased after passivation. A current gain degradation was found when the passivated HBT was exposed to air. The Gummel plots in forward and reverse modes were used to evaluate the properties of the base-emitter and base-collector junctions. The degradations of the base-emitter and base-collector junctions were found to be different. The current gain was independent on the emitter size after passivation compared to the emitter size dependent one before passivation. The size dependent current gain appeared when HBTs exposed to air for 10 days.