Topaloglu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef:
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
2006
In: Turkish Journal of Electrical Engineering & Computer Sciences, Jg. Vol. 14 (2006), Heft No. 3, S. 429 - 436
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
Autor(in):
Topaloglu, Serkan; Driesen, Jörn; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2006
Erschienen in:
Turkish Journal of Electrical Engineering & Computer Sciences, Jg. Vol. 14 (2006), Heft No. 3, S. 429 - 436
ISSN:
ISSN:

Abstract:

High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.