Modeling the Carrier Mobility in Nanowire Channel FET
We report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel metalinsulator-semiconductor field-effect transistor device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to μ = 13,000 cm²/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm²/Vs
Dieser Eintrag ist freigegeben.