Jin, Z.; Uchida, K.; Nozaki, S.; Prost, Werner; Tegude, Franz-Josef:
Passivation of InP-based HBTs
2006
In: Applied Surface Science, Jg. Vol. 252 (2006), Heft No. 21, S. 7664 - 7670
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Passivation of InP-based HBTs
Autor(in):
Jin, Z.; Uchida, K.; Nozaki, S.; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2006
Erschienen in:
Applied Surface Science, Jg. Vol. 252 (2006), Heft No. 21, S. 7664 - 7670
ISSN:
Signatur der UB:

Abstract:

The surface effects, the (NH4)(2)S and low-temperature-deposited SiNx passivations of InP-based heterostructure bipolar transistors (HBTs)have been investigated. The surface recombination current of InP-based HBTs is related to the base structures. The (NH4)(2)S treatment for InGaAs and InP removes the natural oxide layer and results in sulfur-bonded surfaces. This can create surface-recombination-free InP-based HBTs. Degradation is found when the HBTs were exposed to air for 10 days. The low-temperature-deposited SiNx passivation of InGaAs/InP HBTs causes a drastic decrease in the base current and a significant increase in the current gain. The improvement in the HBT performance is attributed to the low deposition temperature and the effect of N-2 plasma treatment in the initial deposition process. The SiNx passivation is found to be stable. S/SiNx passivation of InGaAs/InP HBTs results in a decrease in the base current and an increase in the current gain. The annealing process can cause the base current to decrease further and the current gain increase.