High transconductance MISFET with a single InAs nanowire channel

In: IEEE Electron Device Letters, Jg. Vol. 28 (2007) ; No. 8, S. 682 - 684
ISSN: 0741-3106
Zeitschriftenaufsatz / Fach: Elektrotechnik
Abstract:
Metal–insulator field-effect transistors (FETs) are
fabricated using a single n-InAs nanowire (NW) with a diameter of d = 50 nm as a channel and a silicon nitride gate dielectric. The gate length and dielectric scaling behavior is experimentally studied by means of dc output- and transfer-characteristics and is modeled using the long-channel MOSFET equations. The device properties are studied for an insulating layer thickness of 20–90 nm, while the gate length is varied from 1 to 5 μm. The
InAs NW FETs exhibit an excellent saturation behavior and best breakdown voltage values of VBR > 3 V. The channel current divided by diameter d of an NW reaches 3 A/mm. A maximum normalized transconductance gm/d > 2 S/mm at room temperature is routinelymeasured for devices with a gate length of ≤ 2 μm and a gate dielectric layer thickness of ≤ 30 nm.

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