Alkeev, N. V.; Averin, S. V.; Dorofeev, A. A; Velling, P.; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef:
Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
2007
In: Semiconductors, Jg. Vol. 41 (2007), Heft No. 2, S. 227 - 231
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
Autor(in):
Alkeev, N. V.; Averin, S. V.; Dorofeev, A. A; Velling, P.; Khorenko, E.; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2007
Erschienen in:
Semiconductors, Jg. Vol. 41 (2007), Heft No. 2, S. 227 - 231
ISSN:
ISSN:

Abstract:

A frequency-dependent impedance analysis (0.1-50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed.